This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4835G
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
■ Package
•
• Low noise figure NF
Code
• High forward transfer gain S21e2
• High transition frequency fT
SMini3-F2
Marking Symbol: 3M
Pin Name
1: Base
•
•
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
2: Emitter
3: Collector
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
V
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
15
10
V
2
80
V
Collector current
IC
PC
Tj
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
150
150
Tstg
−55 to +150
■ Electrical Characteristics Ta = 25°C 3°C
Parameter
Symbol
VCBO
VCEO
ICBO
IEBO
hFE
Conditions
Min
15
Typ
Max
Unit
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
IC = 10 µA, IE = 0
IC = 100 µA, IB = 0
VCB = 10 V, IE = 0
VEB = 2 V, IC = 0
10
V
1
1
µA
µA
1, 2
Forward current transfer ratio *
VCE = 8 V, IC = 20 mA
50
5
200
Transition frequency
fT
VCE = 8 V, IC = 15 mA, f = 800 MHz
6
GHz
pF
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
0.7
1.2
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
S21e2 VCE = 8 V, IC = 15 mA, f = 800 MHz
11
14
15
dB
dB
dB
GUM
NF
VCE = 8 V, IC = 15 mA, f = 800 MHz
VCE = 8 V, IC = 7 mA, f = 800 MHz
1.3
2.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. 1: Pulse measurement
*
2: Rank classification
*
Rank
Q
R
S
hFE
50 to 100
80 to 130
100 to 200
Publication date: May 2007
SJC00368AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2
Unit: mm
2.00 0.20
0.30 +−00..0025
3
1
2
0.13 +−00..0025
(0.65)
(0.65)
1.30 0.10
(5°)
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semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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